Collect. Czech. Chem. Commun.
1988, 53, 2995-3013
https://doi.org/10.1135/cccc19882995
A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction
Emerich Erdösa, Jindřich Leitnerb, Petr Voňkab, Josef Stejskalc and Přemysl Klímac
a The J. Heyrovský Institute of Physical Chemistry and Electrochemistry, Czechoslovak Academy of Sciences, 182 23 Prague 8
b Department of Physical Chemistry, Prague Institute of Chemical Technology, 166 28 Prague 6
c Tesla - Popov Research Institute of Radiocommunication, 142 21 Prague 4
Abstract
For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.
