Collect. Czech. Chem. Commun.
1990, 55, 2432-2440
https://doi.org/10.1135/cccc19902432
Qualitative analysis of the vapour-phase equilibrium composition in the systems Si-Cl and Si-Cl-H by matrix-isolation IR spectroscopy
Jindřich Leitnera, Jan Mikuleca and Čestmír Černýb
a Department of Materials for Electronics, Prague Institute of Chemical Technology, 166 28 Prague 6
b Department of Physical Chemistry, Prague Institute of Chemical Technology, 166 28 Prague 6
Individual author index pages
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- Petr Voňka*, Jindřich Leitner and David Sedmidubský
Topology of Potential Phase Diagrams of Partially Open Condensed System
2008, Vol. 73, Issue 3, pp. 372–387 [Abstract] - Petr Voňka and Jindřich Leitner*
Calculation of Chemical Equilibrium in Complex Systems: System Restrictions
2000, Vol. 65, Issue 9, pp. 1443–1454 [Abstract] - Jaroslav Burda, Michal Bureš and Čestmír Černý
Interactions of the SiHxCly Silicon Species with the Si4H9 Cluster
1992, Vol. 57, Issue 2, pp. 248–254 [Abstract] - Jaroslav Burda, Michal Bureš and Čestmír Černý
The Effect of Cluster Size on the Characteristics of Chemisorption in the Model Growth of Silicon Crystals
1992, Vol. 57, Issue 2, pp. 241–247 [Abstract] - Jindřich Leitner, Petr Voňka, Josef Stejskal, Přemysl Klíma and Rudolf Hladina
Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method
1991, Vol. 56, Issue 10, pp. 2020–2029 [Abstract] - Jindřich Leitner, Petr Voňka, Jan Mikulec, Josef Stejskal and Přemysl Klíma
Thermodynamic analysis of the deposition of (Ga, Al)As epitaxial layers prepared by the MOCVD technique
1991, Vol. 56, Issue 4, pp. 865–873 [Abstract] - Jindřich Leitner, Čestmír Černý, Petr Voňka and Jan Mikulec
Theoretical and experimental study of chemical equilibrium in the systems Si-Cl and Si-Cl-H. Calculation of chemical equilibrium in the systems Si-Cl and Si-Cl-H
1989, Vol. 54, Issue 11, pp. 2896–2909 [Abstract] - Emerich Erdös, Jindřich Leitner, Petr Voňka, Josef Stejskal and Přemysl Klíma
A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction
1988, Vol. 53, Issue 12, pp. 2995–3013 [Abstract] - Emerich Erdös, Jindřich Leitner, Petr Voňka, Josef Stejskal and Přemysl Klíma
A dual site growth model of gallium arsenide epitaxial layers from the gas phase
1987, Vol. 52, Issue 5, pp. 1131–1159 [Abstract] - Lidmila Bartovská and Čestmír Černý
The influence of the structure of molybdenum disulphide on its reactivity
1987, Vol. 52, Issue 3, pp. 678–685 [Abstract] - Ivo Braun, Přemysl Klíma, Josef Stejskal, Čestmír Černý, Petr Voňka and Robert Holub
Equilibria in the transport epitaxial formation of indium phosphide and arsenide
1986, Vol. 51, Issue 6, pp. 1213–1221 [Abstract] - Michal Bureš and Čestmír Černý
Calculation of thermodynamic functions of halogen derivatives of silane and germane
1984, Vol. 49, Issue 5, pp. 1211–1227 [Abstract] - Jiřina Hejtmánková, Čestmír Černý and Luděk Jettmar
Solid-gas equilibrium in the binary system lithium iodide-water
1981, Vol. 46, Issue 13, pp. 3157–3165 [Abstract] - Michal Bureš and Čestmír Černý
Studies on rotational barriers in alkyl halogenides by means of vibrational spectroscopy
1980, Vol. 45, Issue 4, pp. 984–996 [Abstract]