Collect. Czech. Chem. Commun.
1991, 56, 2020-2029
https://doi.org/10.1135/cccc19912020
Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method
Jindřich Leitnera, Petr Voňkab, Josef Stejskalc, Přemysl Klímac and Rudolf Hladinac
a Department of Materials for Electronics, Prague Institute of Chemical Technology, 166 28 Prague 6
b Department of Physical Chemistry, Prague Institute of Chemical Technology, 166 28 Prague 6
c Research Institute of Radiocommunication A. S. Popov, 142 21 Prague 4
Abstract
The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.
