Collect. Czech. Chem. Commun.
1991, 56, 2020-2029
https://doi.org/10.1135/cccc19912020
Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method
Jindřich Leitnera, Petr Voňkab, Josef Stejskalc, Přemysl Klímac and Rudolf Hladinac
a Department of Materials for Electronics, Prague Institute of Chemical Technology, 166 28 Prague 6
b Department of Physical Chemistry, Prague Institute of Chemical Technology, 166 28 Prague 6
c Research Institute of Radiocommunication A. S. Popov, 142 21 Prague 4
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