Collection of Czechoslovak Chemical Communications - digital archive 

Abstract

In order to yield analytically useful information every potentiometric measurement requires stable and reproducible reference potential. That requirement has to be satisfied for potentiometry performed in liquid or gas phase alike, although two fundamentally different mechanisms lead to formation of the measurable cell voltage. It is shown that the Fermi level of silicon used in insulated gate field-effect transistors (IGFET) provides an exceptionally stable and robust reference potential. A semi-quantitative dependence of IGFET output on partial pressure of the analyte gas is presented.

Keywords: Reference potential; Work function; Charge-transfer potentiometry; Kelvin probe; Field-effect transistor; Schottky junction; Gas-phase electrochemistry.

References: 14 live references.