Collect. Czech. Chem. Commun.
2009, 74, 565-579
https://doi.org/10.1135/cccc2008210
Published online 2009-03-25 10:54:24
Structural and electronic properties of pentacene/pentacenequinone thin films prepared by Langmuir–Blodgett technique
Martin Weisa, Katarína Gmucováb,*, Daniel Haškoc and Jarmila Müllerovád
a Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, SK-81219 Bratislava, Slovak Republic
b Institute of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, SK-84511 Bratislava, Slovak Republic
c International Laser Center, Slovak University of Technology, Ilkovičova 3, SK-81219 Bratislava, Slovak Republic
d Department of Engineering Fundamentals, Faculty of Electrical Engineering, University of Žilina, ul. kpt. J. Nálepku 1390, SK-03101 Liptovský Mikuláš, Slovak Republic
Abstract
Structural and electronic properties of pentacene/pentacenequinone thin films prepared on various solid-state substrates by the Langmuir–Blodgett technique are reported. Amorphous structure of the prepared films has been proved by XRD measurements. Oxygen-related defects have been identified in the Langmuir–Blodgett films as a consequence of the exposure of pentacene Langmuir layer to air. Crystallization induced by thermal treatment of the prepared amorphous thin films has been observed. Electronic properties of pentacene/ pentacenequinone Langmuir–Blodgett films have been investigated in the contact-less architecture using electrochemical techniques. The energy band diagram of the amorphous pentacene/pentacenequinone Langmuir–Blodgett film on a metallic surface was constructed from the obtained electrochemical data.
Keywords: Pentacene; Monolayers; Thin films; Langmuir–Blodgett technique; Electrochemistry; X-Ray diffraction; Atomic force microscopy.
References: 53 live references.
